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2021.1012

International Conference Paper
Invited Talk

Masao Nagase, (Invited) Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate, 240th ECS meeting, G02-0910 (2021/11/11, Online).

Masao Nagase, (Invited) Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate, 240th ECS meeting, G02-0910 (2021/11/11, Online).

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