People
Developing ultra high temperature MOVPE and observation of threading dislocation for Deep ultraviolet LED
NAGAMATSU Kentaro[Associate Professor]
Division of Next-generation Photonics (Core Faculty)
Kentaro Nagamatsu received the Ph.D. degrees in semiconductor engineering from Meijo University, Aichi, Japan, in 2010.
He joined Semiconductor Device Research Center, Panasonic Co. Ltd., Kyoto, Japan, in 2010. Since 2016 to 2019, he worked in Nagoya University, and Mie University. Since 2019 April, he joined Institute of Post-LED photonics in Tokushima University as the Associate professor.
- Medical Photonics
- Visible
- Infrared
- Terahertz
- Deep ultraviolet
- Information Technology
- Medical
- Inspection
- Light source / Sensing
- etc.
- Deep ultraviolet
- Crystal growth
- Metalorganic vapor phase epitaxy (MOVPE)
- Aluminum nitride (AlN)
- Semiconductor
Research Interests
Deep ultraviolet light emitting diode (LED) is attracted much attention to realize sterilization system for home electric appliance. However, the electron in active layer were used heating and lighting at 50/50, the LED lifetime is not so high compared with another Deep ultraviolet light source such as Mercury lamp.
In this laboratory, We try to develop novel semiconductor manufactural system (MOVPE system) for Deep ultraviolet LED with the temperature of 2000℃. In addition, we aim to reduce threading dislocation from the underling layer, which is the cause of heat generation in the active layer. On the other hands, conventional crystalline quality observation system are not useful in case of the dislocation density is very low with increasing efficiency in Deep ultraviolet LED. So we try to develop dislocation observation system too. As a result, we focus reduction threading dislocation density in AlN underling layer for long life time Deep ultraviolet LED and these application development.
