- 国際会議論文
- 招待講演
Masao Nagase, (Invited) Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate, 240th ECS meeting, G02-0910 (2021/11/11, Online).
Masao Nagase, (Invited) Vertically Stacked Junction Devices Fabricated Using Single-Crystal Graphene on SiC Substrate, 240th ECS meeting, G02-0910 (2021/11/11, Online).