- ニュース
International Workshop on Nitride semiconductors 2022で当研究所から4件発表
International Workshop on Nitride semiconductors 2022が2022年10月9日-14日にベルリンで開催されます。当研究所からは以下の4件のポスター発表が予定されております。
1.
oral presentation “The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE”
K. Nagamatsu, T. Miyagawa, A. Tomita, H. Hirayama,Y. Takashima, Y. Naoi
2.
poster presentation “Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle”
Takumi Miyagawa, Tomita Atsushi, Shota Tuda, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
3.
poster presentation “Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃”
Takumi Miyagawa, Tomita Atsushi, Hideki Hirayama, Yuusuke Takashima,Yoshiki Naoi, Kentaro Nagamatsu
4.
poster presentation “The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrate”
Atsushi Tomita, Shota Tsuda, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
