- 国際会議論文
K. Nagamatsu, T. Miyagawa, A. Tomita, H. Hirayama,Y. Takashima, Y. Naoi, “ The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE”, International Workshop on Nitride semiconductors 2022 , AT037, Oct. 10,2022/10/10(Oct. 09-14, 2022/Germany).
K. Nagamatsu, T. Miyagawa, A. Tomita, H. Hirayama,Y. Takashima, Y. Naoi, “ The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE”, International Workshop on Nitride semiconductors 2022 , AT037, Oct. 10,2022/(Oct. 09-14, 2022/Germany).